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Number of visits: 107180

 
27/6/07    14:20 - 15:00
RF MEMS modeling, simulation and reliability 		WeA1
Room: Auditorium
Chair: Tauno Vähä-Heikkilä
Charging Processes in RF-MEMS Capacitive Switches with SiO2 Dielectric
G Papaioannou, F Giacomozzi, E Papandreou, B Margesin

Dielectric Material Charging and ESD stress of AlN-based Capacitive RF MEMS
J. Ruan, N. Nolhier, M. Bafleur, L. Bary, N. Mauran, F. Coccetti, T. Lisec, R. Plana

 

International Centre for Numerical Methods in Engineering. Barcelona, Spain.
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